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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18030B/D The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 - 1990 MHz. * Typical GSM Performance: Power Gain - 14 dB (Typ) @ 30 Watts Efficiency - 50% (Typ) @ 30 Watts * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 W CW Output Power * Excellent Thermal Stability * Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. MRF18030BR3 MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465E-03, STYLE 1 NI-400 MRF18030BR3 CASE 465F-03, STYLE 1 NI-400S MRF18030BSR3 MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 +15, -0.5 83.3 0.48 -65 to +200 200 Unit Vdc Vdc Watts W/C C C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 2.1 Unit C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MOTOROLA RF Motorola, Inc. 2002 DEVICE DATA MRF18030BR3 MRF18030BSR3 1 ELECTRICAL CHARACTERISTICS (TC = 25C, 50 ohm system unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 Adc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture) (2) Output Power, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 250 mA, f = 1930 - 1990 MHz) Common-Source Amplifier Power Gain @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1930 - 1990 MHz) Drain Efficiency @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1930 - 1990 MHz) Input Return Loss @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1930 - 1990 MHz) Output Mismatch Stress @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f1 = 1930 - 1990 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. (2) Device specifications obtained on a Production Test Fixture. P1dB Gps IRL 27 13 46.5 -- 30 14 50 -12 -- -- -- -9 Watts dB % dB Crss -- 1.3 -- pF VGS(th) VGS(Q) VDS(on) gfs 2 2 -- -- 3 3.9 0.29 2 4 4.5 0.4 -- Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 1 1 Vdc Adc Adc Symbol Min Typ Max Unit No Degradation In Output Power Before and After Test MRF18030BR3 MRF18030BSR3 2 MOTOROLA RF DEVICE DATA VGG R2 R3 C7 R1 C8 Z9 C4 + VDD C9 RF INPUT Z4 Z1 C1 Z2 C2 Z3 DUT Z5 Z6 C3 Z7 C6 Z8 RF OUTPUT C5 C1 C2 C3 C4, C5 C6, C7, C8 C9 R1 R2, R3 Z1 1.8 pF, 100B Chip Capacitor 0.8 pF, 100B Chip Capacitor 0.8 pF, 100B Chip Capacitor 1.2 pF, 100B Chip Capacitors 8.2 pF, 100B Chip Capacitors 220 mF, 63 V Electrolytic Capacitor 1.0 k, 1/8 W Chip Resistor (0805) 10 k, 1/8 W Chip Resistors (0805) 0.496 x 0.087 Microstrip Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 1.022 x 0.087 Microstrip 0.257 x 0.633 Microstrip 0.189 x 0.394 Microstrip 0.335 x 0.394 Microstrip 0.616 x 0.087 Microstrip 0.845 x 0.087 Microstrip 0.366 x 0.087 Microstrip 0.500 x 0.087 Microstrip Figure 1. 1930 - 1990 MHz Test Fixture Schematic VBIAS R2 R3 C7 C1 C2 CUTOUT AREA C5 C3 R1 C8 C4 C9 VSUPPLY C6 Ground (bias) MRF18030B Ground (supply) Figure 2. 1930 - 1990 MHz Test Fixture Component Layout MOTOROLA RF DEVICE DATA MRF18030BR3 MRF18030BSR3 3 16 15 G ps , POWER GAIN (dB) 14 13 12 11 10 1850 VDD = 26 Vdc IDQ = 250 mA T = 25_C 1900 Gps @ 15 W Gps @ 30 W 0 Pout , OUTPUT POWER (WATTS) IRL, INPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 2050 40 35 30 25 20 15 10 5 0 1880 1900 1920 1940 1960 1980 2000 2020 0.5 W VDD = 26 Vdc IDQ = 250 mA T = 25_C Pin = 2 W 1W IRL @ 30 W IRL @ 15 W 0.25 W 1950 f, FREQUENCY (MHz) 2000 f, FREQUENCY (MHz) Figure 3. Wideband Gain and IRL at 30 W and 15 W Output Power Figure 4. Output Power versus Frequency 16 15 G ps , POWER GAIN (dB) 14 13 12 11 10 IDQ = 400 mA G ps , POWER GAIN (dB) 300 mA 200 mA 15 14 13 12 11 10 9 100 0.1 VDD = 26 Vdc IDQ = 250 mA f = 1960 MHz 1 10 100 Pout, OUTPUT POWER (WATTS) T = 25_C 55_C 85_C 100 mA VDD = 26 Vdc f = 1960 MHz T = 25_C 0.1 1 10 Pout, OUTPUT POWER (WATTS) Figure 5. Power Gain versus Output Power Figure 6. Power Gain versus Output Power 15 14 G ps , POWER GAIN (dB) 13 12 11 IDQ = 250 mA f = 1960 MHz T = 25_C 1 10 Pout, OUTPUT POWER (WATTS) 16 15 G ps , POWER GAIN (dB) 14 13 12 h 11 10 100 0.1 1 VDD = 26 Vdc IDQ = 250 mA f = 1960 MHz T = 25_C 10 Gps 60 50 40 30 20 10 0 100 , DRAIN EFFICIENCY (%) 30 V 28 V 26 V VDD = 22 V 24 V 10 Pout, OUTPUT POWER (WATTS) Figure 7. Power Gain versus Output Power Figure 8. Power Gain and Efficiency versus Output Power MRF18030BR3 MRF18030BSR3 4 MOTOROLA RF DEVICE DATA Zin f = 1710 MHz f = 1710 MHz Zo = 25 ZOL* f = 2110 MHz f = 2110 MHz VDD = 26 V, IDQ = 250 mA, Pout = 30 W (CW) f MHz 1710 1785 1805 1840 1880 1960 1990 2110 Zin Zin 2.92 + j8.24 3.84 + j9.75 4.15 + j10.38 4.04 + j10.22 6.12 + j12.29 6.20 + j12.29 8.61 + j12.10 15.19 + j11.85 ZOL* 4.18 + j9.06 4.59 + j9.46 4.98 + j9.06 6.10 + j7.63 5.83 + j6.89 5.55 + j6.33 5.93 + j6.66 3.82 + j5.33 = Complex conjugate of the source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given power, voltage, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, and drain efficiency. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 9. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF18030BR3 MRF18030BSR3 5 NOTES MRF18030BR3 MRF18030BSR3 6 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS 2X G B 1 2X K 2 2X D bbb N (LID) ccc M M Q M bbb TB M A M 3 B NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .003 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .110 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.07 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 2.79 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC TA M B M TA M B E M ccc C M TA M B M R (LID) F aaa M TA M B M M (INSULATOR) A T SEATING PLANE S (INSULATOR) aaa M H B M TA M A STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465E-03 ISSUE D NI-400 MRF18030BR3 2X D bbb M T A 1 M B M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .003 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.08 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF 2 2X K ccc E M TA M B M R C 3 (LID) ccc M TA M B M N (LID) F A A (FLANGE) T M SEATING PLANE H S (INSULATOR) aaa B (FLANGE) M TA M B M (INSULATOR) aaa M TA M B B M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465F-03 ISSUE B NI-400S MRF18030BSR3 MOTOROLA RF DEVICE DATA MRF18030BR3 MRF18030BSR3 7 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852-26668334 Technical Information Center: 1-800-521-6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF18030BR3 MRF18030BSR3 8 MRF18030B/D MOTOROLA RF DEVICE DATA |
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